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2SD2318
Transistors
High-current gain Power Transistor (60V, 3A)
2SD2318
!Features 1) High DC current gain. 2) Low saturation voltage. (Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A) 3) Complements the 2SB1639. !External dimensions (Units : mm)
0.75
5.5
1.5
(3) (2) (1)
2.3
0.9
0.9
0.65 2.3
5.1 6.5
C0.5
1.0 0.5
0.5
1.5 2.5 9.5
!Absolute maximum ratings (Ta=25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 80 60 6 3 4.5 1 15 150 -55~+150 Unit V V V A A(Pulse) W W(Tc=25C) C C
ROHM : CPT3 EIAJ : SC-63
*
* Single pulse Pw=100ms
!Packaging specifications and hFE
Type Package hFE Code Basic ordering unit (pieces) 2SD2318 CPT3 UV TL 2500
!Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob Min. 80 60 6 560 Typ. 50 60 Max. 100 100 1.0 1.5 1800 Unit V V V A A V V MHz pF IC=50A IC=1mA IE=50A VCB=80V VEB=6V IC/IB=2A/0.05A IC/IB=2A/0.05A VCE/IC=4V/0.5A VCE=5V, IE=-0.2A, f=10MHz VCB=10V, IE=0A, f=1MHz Conditions
* * *
* Measured using pulse current.
2.3
0.8Min.
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)

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